The adoption of new materials such as GaN and SiC are key to improving the efficiency of power supplies.Īfter initiating mass production of 150V GaN HEMTs – featuring a gate breakdown voltage of 8V in 2022 – in March 2023 ROHM established control IC technology for maximizing GaN performance. Improving the efficiency of power supplies and motors, which account for most of the world’s electricity consumption, has become a significant hurdle to achieving a decarbonized society. These new products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, Inc., that develops GaN devices. ROHM has started with the mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a wide range of power supply systems applications. Increasing efficiency and miniaturization in a wide range of power supply systems, including servers and AC adapters
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